Authors : P. A Yadav, K G Rewatkar
Page Nos : 1380-1386
Description :
Quite recently a new carbon nanostructure, called graphite, has emerged, taking the attention of the scientific community because of its promising use in spintronics. Besides, many efforts have been dedicated to study the electronic properties of graphene, because creating a gap could allow the use of graphene in field effect transistors. In graphene, the presence of different types of boundary shapes, called edges, modifies the electronic structure of the material.
This paper reviews recent advances in the modification of graphene –SiO2 (CSO) nanocomposites. The modification of graphene/graphene oxide and the utilization of these materials in the fabrication of nanocomposites with different materials matrixes have been explored. Graphene was synthesised by Hummer method, which was added at various composition with AR grade SiO2. In looking for above mentioned applications we have decided to prepare nanocomposite of graphene-silicon dioxide (CSO) in the various proportions viz. 1:2, 1:3, 2:1 and 3:1. These composites were studied using its electrical conductivity measurements on four probe method from room temperature to 523 oK. The ln σ vs. 1/T (K) showed stable electrical conductivity behaviour. This is most suitable for thermal management systems. Similarly the AC conductivity measurements were carried out at room temperature which shows linear behaviour which is suitable for microelectronic devices.
