Authors : V. P. Malekar, V. J. Fulari and V. P. Kothavale
Page Nos : 148-151
Description :
Nanostructure Copper Chalcogenide thin films are prepared using electrodeposition technique. The structural, morphological and surface wettability properties of the as deposited Copper Sulphide thin films have been studied using XRD, SEM and contact angle measurement. FT-Raman and FT-IR spectral properties of the deposited films have been studied by FT Raman and FT-IR spectrophotometer. Optical band gap energy (Eg value) for Copper Sulphide thin films ranges from 2.1 eV to 2.3 eV. Using as deposited holographic thin films fringe width, thickness of thin film, stress to substrate and mass deposited can be calculated. It is observed that, increase in deposition time thickness of thin film and mass deposited increases but fringe width as well as stress to substrate decreases.
Keywords: FT Raman; Copper Sulphide; Fringe width; Nanostructure; Wettability
