Authors : T. D. Dongale, S. R. Ghatage and G. S. Patil
Page Nos : 80-84
Description :
In the present report, we have investigated the effect of the low-frequency signal on nanoscale memristor device. The frequency is varied from 2 Hz to 10 Hz and the corresponding effect on the current-voltage characteristics, time domain state variable, charge-magnetic flux relation, memristance-charge relation, memristance-voltage characteristics and memristance-magnetic flux relation are studied. The results clearly suggested that the frequency of the input stimulus plays an important role in the device dynamics.
Keywords: Memristor; Simulation; Low-frequency signal
