Authors : S. A. Gaikwad1, Y. D. Tembhurkar2 and A. S. Meshram
Page Nos : 358-365
Description :
Ternary compound semiconductor CuInSeS film has been deposited spray pyrolytically
using aqueous solution containing CuCl2, InCl2, (H2NCSNH2) and SeO2. Structural
characterization of the deposited film has been carried out using X-ray diffraction
technique. The chalcopyrite structure of the film was confirmed with 112 preferred
orientations. The films were polycrystalline. The resistivity of the film was measured for
temperature ranging from 77 K to 473 K. The activation energy values were calculated
from the Arrhenius plot. In the low temperature region conduction takes place through
variable range hopping mechanism. The Hall mobility and carrier concentration at room
temperature were calculated using the Van der Pauw-Hall method.
